Resumo

THERON, C.; MOKOENA, N.  e  NDWANDWE, O.M.. Solid-state compound phase formation of TiSi₂ thin films under stress. S. Afr. j. sci. [online]. 2009, vol.105, n.11-12, pp.440-444. ISSN 1996-7489.

Different stress situations were created on an Si(100) wafer by depositing either Si₃N₄ or SiO₂ thin films on the back side. Si₃N₄ has a different thermal expansion coefficient from that of SiO₂. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si₃N₄-deposited samples and SiO₂-deposited samples.

Palavras-chave : stress; thin films; real-time Rutherford backscattering spectrometry; phase formation; TiSi₂; diffusion.

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