SciELO - Scientific Electronic Library Online

vol.105 número11-12Charles Darwin and John HerschelMinerals, trace elements and antioxidant phytochemicals in wild African dark-green leafy vegetables (morogo) índice de autoresíndice de materiabúsqueda de artículos
Home Pagelista alfabética de revistas  

Servicios Personalizados



Links relacionados

  • En proceso de indezaciónCitado por Google
  • En proceso de indezaciónSimilares en Google


South African Journal of Science

versión On-line ISSN 1996-7489
versión impresa ISSN 0038-2353


THERON, C.; MOKOENA, N.  y  NDWANDWE, O.M.. Solid-state compound phase formation of TiSi2 thin films under stress. S. Afr. j. sci. [online]. 2009, vol.105, n.11-12, pp.440-444. ISSN 1996-7489.

Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.

Palabras clave : stress; thin films; real-time Rutherford backscattering spectrometry; phase formation; TiSi2; diffusion.

        · texto en Inglés     · Inglés ( pdf )


Creative Commons License Todo el contenido de esta revista, excepto dónde está identificado, está bajo una Licencia Creative Commons