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South African Journal of Science

Print version ISSN 0038-2353

Abstract

THERON, C.; MOKOENA, N.  and  NDWANDWE, O.M.. Solid-state compound phase formation of TiSi2 thin films under stress. S. Afr. j. sci. [online]. 2009, vol.105, n.11-12, pp. 440-444. ISSN 0038-2353.

Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.

Keywords : stress; thin films; real-time Rutherford backscattering spectrometry; phase formation; TiSi2; diffusion.

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