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South African Journal of Science

versión On-line ISSN 1996-7489
versión impresa ISSN 0038-2353

Resumen

SWAIN, Bibhu P.. The structural characterisation of HWCVD-deposited nanocrystalline silicon films. S. Afr. j. sci. [online]. 2009, vol.105, n.1-2, pp.77-80. ISSN 1996-7489.

Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30-50% and the nc-Si crystallite size was in the range 20-35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.

Palabras clave : HWCVD; SAXS; Raman; XRD.

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